High resolution x-ray diffraction to characterize semiconductor materials
X-ray diffraction gives information on the composition and lattice strain of III-V and II-VI ternary and quaternary heteroepitaxial semiconductor layers used in the fabrication of optoeletronic devices. In this article we give a brief introduction to the materials used in technology of III-V optoele...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Online |
| Language: | Portuguese |
| Published: |
Universidade Estadual de Campinas
2020
|
| Subjects: | |
| Online Access: | https://econtents.sbu.unicamp.br/inpec/index.php/physicae/article/view/13476 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
